PART |
Description |
Maker |
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor
|
NXP Semiconductors N.V.
|
MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty LDMOS Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
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PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G20LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF188XRG-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF8G27LS-100GV |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF178XR112 SOT539A BLF178XRS |
Power LDMOS transistor
|
NXP Semiconductors
|
LK822-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLU6H0410LS-600P |
Power LDMOS transistor
|
NXP Semiconductors
|